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SI4204DY-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 19.8 A, 19.8 A, 0.0038 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI4204DY-T1-GE3Copy
Manufacturer Standard Lead Time27 weeks
Newark Part No.
Full Reel86R3883
Re-Reel69W7196RL
Cut Tape69W7196
Your Part Number
1,750 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.300 | $4.30 |
| Total Price | $4.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $4.300 |
| 50+ | $2.930 |
| 100+ | $2.140 |
| 250+ | $1.970 |
| 500+ | $1.800 |
| 1000+ | $1.720 |
| 2500+ | $1.650 |
| 5000+ | $1.620 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $1.440 |
| 7500+ | $1.350 |
| 12500+ | $1.280 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4204DY-T1-GE3Copy
Manufacturer Standard Lead Time27 weeks
Newark Part No.
Full Reel86R3883
Re-Reel69W7196RL
Cut Tape69W7196
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id19.8A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel19.8A
Continuous Drain Current Id P Channel19.8A
Drain Source On State Resistance N Channel0.0038ohm
Drain Source On State Resistance P Channel0.0038ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.25W
Power Dissipation P Channel3.25W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SI4204DY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter, fixed telecom and notebook PC applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
19.8A
Drain Source On State Resistance P Channel
0.0038ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.25W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
19.8A
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
19.8A
Drain Source On State Resistance N Channel
0.0038ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate