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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$12.880 10+$12.040 25+$11.280 50+$10.690 100+$10.300 More Pricing... | Single | N Channel | N Channel | 18.4A | 1.2kV | 0.15ohm | 150mohm | TO-247 | 3Pins | 12V | 4.4V | 166.7W | 166.7W | 175°C | ||||||
Each | 1+$11.400 10+$10.650 25+$10.110 50+$9.600 100+$9.250 More Pricing... | Single | N Channel | N Channel | 18.4A | 1.2kV | 0.15ohm | 150mohm | TO-247 | 4Pins | 12V | 4.4V | 166.7W | 166.7W | 175°C | ||||||
