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UF3C120150K4S
Silicon Carbide MOSFET, Single, N Channel, 18.4 A, 1.2 kV, 150 mohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoUF3C120150K4SCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.47AK1761
Your Part Number
442 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $18.690 |
| 10+ | $11.590 |
| 25+ | $11.130 |
| 50+ | $10.670 |
| 100+ | $10.110 |
| 250+ | $9.530 |
| 500+ | $9.340 |
Price for:Each
Minimum: 1
Multiple: 1
$18.69
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C120150K4SCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.47AK1761
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id18.4A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.15ohm
Drain Source On State Resistance150mohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max4.4V
Power Dissipation Pd166.7W
Power Dissipation166.7W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
150mohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.4V
Power Dissipation
166.7W
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
18.4A
On Resistance Rds(on)
0.15ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
12V
Power Dissipation Pd
166.7W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate