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SKHI 22A H4 R
Gate Driver, Half Bridge, IGBT, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSEMIKRON
Manufacturer Part NoSKHI 22A H4 R
Newark Part No.55X3131
Product RangeSEMIDRIVER Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $701.500 |
| 5+ | $635.970 |
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Multiple: 1
$701.50
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKHI 22A H4 R
Newark Part No.55X3131
Product RangeSEMIDRIVER Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Gate Driver Type-
Continuous Collector Current-
Driver ConfigurationHalf Bridge
Collector Emitter Saturation Voltage-
Power Switch TypeIGBT
Power Dissipation-
Driver Case StyleModule
IC Case / PackageModule
Transistor Case StyleSMD
IC MountingSurface Mount
IGBT TerminationSolder
Collector Emitter Voltage Max1.7kV
IGBT Technology-
Transistor MountingSurface Mount
Supply Voltage Min14.4V
Supply Voltage Max15.6V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Input Delay1µs
Output Delay1µs
Product RangeSEMIDRIVER Series
Qualification-
Product Overview
SKHI 22A H4 R is a SEMIDRIVER™ hybrid dual IGBT driver. It is used for IGBT modules in bridge circuits in industrial applications.
- Compatible to old SKHI 22, turn on gate voltage output is 15V typical
- CMOS compatible inputs, turn off gate voltage output is -7V typical
- Short protection by VCE monitoring and switch off
- Drive interlock top/bottom, internal gate emitter resistance is 22Kohm typical
- Isolation by transformers, input to output turn on propagation time is 1µs typical
- Supply undervoltage protection (13V)
- Error latch/output, error reset time is 9µs typical
- Supply voltage primary side is 15V typical
- Supply current primary side (no load) is 80mA typical
- Operating temperature range from -40°C to 85°C
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
-
Collector Emitter Saturation Voltage
-
Power Dissipation
-
IC Case / Package
Module
IC Mounting
Surface Mount
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Surface Mount
Supply Voltage Max
15.6V
Operating Temperature Max
85°C
Output Delay
1µs
Qualification
-
Gate Driver Type
-
Driver Configuration
Half Bridge
Power Switch Type
IGBT
Driver Case Style
Module
Transistor Case Style
SMD
IGBT Termination
Solder
IGBT Technology
-
Supply Voltage Min
14.4V
Operating Temperature Min
-40°C
Input Delay
1µs
Product Range
SEMIDRIVER Series
SVHC
No SVHC (15-Jun-2015)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability