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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG2305UX-7
Newark Part No.82Y6564
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.052ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.4W
Gate Source Threshold Voltage Max900mV
Power Dissipation1.4W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMG2305UX-7 is a P channel enhancement mode MOSFET in 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is used in backlighting, power management functions, DC-DC converters and motor controls.
- Low on-resistance of 52mohm at VGS = -4.5V
- Low input capacitance
- Fast switching speed
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.04ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Continuous Drain Current Id
4.2A
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.4W
Power Dissipation
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate