Print Page
DMN10H220L-7
Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
3,305 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
| Quantity | Price |
|---|---|
| 1+ | $0.189 |
| 10+ | $0.189 |
| 25+ | $0.189 |
| 50+ | $0.189 |
| 100+ | $0.189 |
| 250+ | $0.189 |
| 500+ | $0.189 |
| 1000+ | $0.189 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.19
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H220L-7
Newark Part No.07AH3755
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.4A
On Resistance Rds(on)0.22ohm
Drain Source On State Resistance0.22ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Alternatives for DMN10H220L-7
2 Products Found
Product Overview
DMN10H220L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications and load switches.
- Low on resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is 100V at TA = +25°C
- Gate-source voltage is ±16V at TA = +25°C
- Continuous drain current is 1.6A at TA = +25°C, VGS = 10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 8A at TA = +25°C
- Total power dissipation is 1.3W at TA = +25°C
- Maximum continuous body diode forward current is 0.6A at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.22ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.4A
Drain Source On State Resistance
0.22ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.3W
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate