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DMN10H220L-7
Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H220L-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel07AH3756
Re-Reel07AH3755RL
Cut Tape07AH3755
Your Part Number
10 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.733 | $0.73 |
| Total Price | $0.73 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.733 |
| 50+ | $0.466 |
| 100+ | $0.308 |
| 250+ | $0.274 |
| 500+ | $0.240 |
| 1000+ | $0.217 |
| 2500+ | $0.213 |
| 5000+ | $0.209 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.149 |
| 6000+ | $0.142 |
| 12000+ | $0.135 |
| 18000+ | $0.127 |
| 30000+ | $0.116 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H220L-7Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel07AH3756
Re-Reel07AH3755RL
Cut Tape07AH3755
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.4A
On Resistance Rds(on)0.22ohm
Drain Source On State Resistance0.22ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN10H220L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications and load switches.
- Low on resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is 100V at TA = +25°C
- Gate-source voltage is ±16V at TA = +25°C
- Continuous drain current is 1.6A at TA = +25°C, VGS = 10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 8A at TA = +25°C
- Total power dissipation is 1.3W at TA = +25°C
- Maximum continuous body diode forward current is 0.6A at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.22ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.4A
Drain Source On State Resistance
0.22ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.3W
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate