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| Quantity | Price |
|---|---|
| 1+ | $1.080 |
| 10+ | $0.901 |
| 25+ | $0.809 |
| 50+ | $0.734 |
| 100+ | $0.645 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMN2B01F
Newark Part No.59M3728
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.4A
Drain Source On State Resistance0.1ohm
On Resistance Rds(on)0.1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd806mW
Gate Source Threshold Voltage Max1V
Power Dissipation806mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZXMN2B01F is a N-channel enhancement-mode MOSFET with low gate drive capability. This new generation Trench MOSFET from Zetex features low ON-resistance achievable with low gate drive.
- Fast switching speed
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.1ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.4A
On Resistance Rds(on)
0.1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
806mW
Power Dissipation
806mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability