HMC509LP5ETR

HMC509LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13dBm typical from a +5V supply. It is widely used in application such as VSAT radio, point to point/multi-point radio, test equipment & industrial controls, military end-use etc.

• Dual output: Fo = 7.8GHz - 8.8GHz, Fo/2 = 3.9GHz - 4.4GHz
• No external resonator needed
• Phase noise is -115dBc/Hz typ at (100KHz offset, Vtune= +5V at RFOUT)
• Tune voltage range is 2V to 13V
• Supply current is 250mA typ at (TA = +25°C, Vcc = +5V)
• Tune port leakage current is 10µA typ at (TA = +25°C, Vcc = +5V)
• Output return loss is 2dB typ at (TA = +25°C, Vcc = +5V)
• Frequency drift rate is 0.9MHz/°C typ at (TA = +25°C, Vcc = +5V)
• Operating temperature is -40°C to +85°C
• Package style is QFN

Remarques

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party