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Quantité | Prix |
---|---|
1+ | 67,350 $ |
10+ | 57,510 $ |
25+ | 56,830 $ |
50+ | 56,130 $ |
100+ | 54,270 $ |
250+ | 53,690 $ |
500+ | 51,640 $ |
Informations produit
Aperçu du produit
HMC511LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13dBm typical from a +5V supply. It is used in application such as VSAT radio, point to point/multi-point radio, test equipment & industrial controls, military end-use etc.
- Dual output frequency range is Fo = 9.05GHz - 10.15GHz, Fo/2 = 4.525GHz - 5.075GHz
- Phase noise is -115dBc/Hz typical at (100KHz offset, Vtune= +5V at RFOUT)
- Tune voltage range is 2V to 13V
- Supply current is 265mA typ at (TA = +25°C, Vcc = +5V)
- Tune port leakage current is 10µA typ at (TA = +25°C, Vcc = +5V)
- Output return loss is 2dB typ at (TA = +25°C, Vcc = +5V)
- Frequency drift rate is 0.9MHz/°C typ at (TA = +25°C, Vcc = +5V)
- Operating temperature is -40°C to +85°C, no external resonator needed
- Package style is 32-lead QFN
Remarques
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Spécifications techniques
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5V
-40°C
-
SMD, 5mm x 5mm
-
85°C
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit