Quantité | Prix |
---|---|
1+ | 70,810 $ |
5+ | 66,630 $ |
10+ | 62,430 $ |
25+ | 59,540 $ |
50+ | 57,560 $ |
100+ | 55,580 $ |
Informations produit
Aperçu du produit
HMC530LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +11dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. It is widely used in application such as point to point/multipoint radio, test equipment & industrial controls, SATCOM, military end-use etc.
- No external resonator needed
- Triple output: Fo = 9.5GHz to 10.8GHz, Fo/2 = 4.75GHz to 5.4GHz, Fo/4 = 2.38GHz to 2.7GHz
- SSB phase noise is -110dBc/Hz typical at (TA = +25°C)
- Tune voltage is 2V to 12V
- Supply current is 350mA typical at (TA = +25°C)
- Output return loss is 5dB typical at (TA = +25°C)
- Frequency drift rate is 1MHz/°C typical at (TA = +25°C)
- Operating temperature range from -40°C to +85°C
- Package style is 32-lead SMT
Remarques
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Spécifications techniques
-
5V
-40°C
-
SMD, 5mm x 5mm
-
85°C
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit