Vous en voulez davantage ?
Quantité | Prix |
---|---|
1+ | 94,400 $ |
5+ | 86,870 $ |
10+ | 79,350 $ |
25+ | 76,940 $ |
50+ | 74,540 $ |
100+ | 72,130 $ |
Informations produit
Aperçu du produit
AFBR-S4N66P024M is a Broadcom® 2×1 NUV-MT silicon photomultiplier array used for ultra-sensitive precision measurements of single photons. Two 6mm × 6mm SiPMs are arranged in a 2×1 element array with a pitch of 7mm. Larger areas can be covered with a SiPM-pitch of 7mm by tiling multiple arrays. The passivation layer is a clear epoxy mold compound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum. The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials. Application includes X-ray and gamma ray detection, gamma ray spectroscopy, safety and security, nuclear medicine, positron emission tomography, life sciences, flow cytometry, high energy physics.
- Array size 13.54mm × 6.54mm, high PDE (63% at 420nm)
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage
- Excellent uniformity of gain
- Four-side tilable, with high fill factors
- Cell pitch 40µm
- Highly transparent epoxy protection layer
- Operating temperature range from 0°C to +60°C
- Used in fluorescence-luminescence measurements, time-correlated single photon counting, astrophysics
Spécifications techniques
Silicon Photomultiplier
13.54mm x 6.54mm
13.54mm x 6.54mm
40µm
SMD
0°C
-
No SVHC (12-Jan-2017)
2 x 1
0
22428Microcells
420nm
16Pins
60°C
MSL 1 - Unlimited
Documents techniques (2)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit