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HSMS-2802-TR1G
RF Schottky Diode, Barrier, Dual Series, 70 V, 1 A, 410 mV, 2 pF, SOT-23
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Modèle arrêté
Informations produit
FabricantBROADCOM
Réf. FabricantHSMS-2802-TR1G
Code Commande63J9476
Fiche technique
Diode ConfigurationDual Series
Reverse Voltage70V
Forward Current1A
Forward Voltage410mV
Forward Voltage VF Max410mV
Diode Capacitance2pF
Diode Case StyleSOT-23
No. of Pins3 Pin
Diode MountingSurface Mount
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (12-Jan-2017)
Aperçu du produit
The HSMS-2802-TR1G is a 3-pin dual surface-mount RF Schottky Barrier Diode for both analogue and digital applications. The HSMS-280x family has the highest breakdown voltage, but at the expense of a high value of series resistance (Rs). In applications which do not require high voltage the HSMS-282x family, with a lower value of series resistance, will offer higher current carrying capacity and better performance.
- High breakdown voltage
- Low FIT (failure in time) rate
- Six-sigma quality level
- 35Ω Typical dynamic resistance
- 500°C/W Thermal resistance
- 150°C Junction temperature
Applications
RF Communications
Avertissements
ESD sensitive device, take proper precaution while handling the device.
Spécifications techniques
Diode Configuration
Dual Series
Forward Current
1A
Forward Voltage VF Max
410mV
Diode Case Style
SOT-23
Diode Mounting
Surface Mount
Product Range
-
Reverse Voltage
70V
Forward Voltage
410mV
Diode Capacitance
2pF
No. of Pins
3 Pin
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :No SVHC (12-Jan-2017)
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Certificat de conformité du produit