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GT50J325
IGBT, 600V, TO-3P(LH)
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Modèle arrêté
Informations produit
FabricantTOSHIBA
Réf. FabricantGT50J325Copie
Code Commande24M2387
Fiche technique
Continuous Collector Current50A
DC Collector Current50A
Collector Emitter Saturation Voltage2.45V
Collector Emitter Saturation Voltage Vce(on)2.45V
Power Dissipation Pd240W
Power Dissipation240W
Collector Emitter Voltage Max600V
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Aperçu du produit
The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
- Fourth generation IGBT
- Enhancement mode type
- Fast switching
- Operating frequency up to 50KHz
- Maximum collector emitter saturation voltage of 2.45V
- FRD included between emitter and collector
- Collector emitter voltage VCES of 600V
- DC collector current of 50A
- Junction temperature of 150°C
- Collector power dissipation of 240W
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Spécifications techniques
Continuous Collector Current
50A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation Pd
240W
Collector Emitter Voltage Max
600V
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2020)
DC Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.45V
Power Dissipation
240W
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :No SVHC (25-Jun-2020)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit