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Quantité | Prix |
---|---|
1+ | 25,160 $ |
10+ | 23,450 $ |
25+ | 22,860 $ |
50+ | 20,660 $ |
100+ | 19,580 $ |
250+ | 17,020 $ |
500+ | 16,530 $ |
Informations produit
Aperçu du produit
The VTS3082H is a Silicon Photodiode Bare Chip with 103mm² active area designed for spectral response between 400 and 1100nm. This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Its excellent speed and broadband sensitivity makes them ideal for detecting light form a variety of sources such as LEDs, IREDs, flash lamps, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on this photodiode provides a cost effective design solution for many applications.
- Visible to IR spectral range
- Very large active area
- 1% Linearity over 4 decades of illumination
- Moderate shunt resistance
- Low capacitance
- #30AWG Insulated and flexible wires
Applications
Sensing & Instrumentation, Metering
Spécifications techniques
2Pins
925nm
0.05µA
105°C
-
To Be Advised
44A
-
-40°C
-
-
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit