VTT1115H

The VTT1115H is a large area high sensitivity NPN Silicon Phototransistor in hermetic TO lensed window package having a large active area designed for spectral response between 400 and 1050nm. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. This device is spectrally matched to the VTE11xxH series of IREDs. Phototransistor is photodiode-amplifier combinations integrated within a single silicon chip and permit to ever-come the major limitation of photodiodes - unity gain. Since the phototransistor signal is internally amplified, phototransistor provides a low cost alternative to photodiode because there is no need to have external circuitry for amplification.

• Visible to IR spectral range
• Low dark current
• Fast response
• Spectrally and mechanically matched to the VTE11XXH series of IRED
• Narrow field of view

Applications

Sensing & Instrumentation, Automation & Process Control, System Monitoring, Lighting, Safety, Computers & Computer Peripherals