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BFS17PE6327HTSA1
Bipolar - RF Transistor, N Channel, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23
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FabricantINFINEON
Réf. FabricantBFS17PE6327HTSA1
Code Commande24M0744
Egalement appeléBFS 17P E6327, SP000011073
Votre numéro de pièce
Modèle arrêté
Informations produit
FabricantINFINEON
Réf. FabricantBFS17PE6327HTSA1
Code Commande24M0744
Egalement appeléBFS 17P E6327, SP000011073
Fiche technique
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Collector Emitter Voltage V(br)ceo15V
Transition Frequency2.5GHz
Power Dissipation Pd280mW
Power Dissipation280mW
Continuous Collector Current25mA
DC Collector Current25mA
Transistor Case StyleSOT-23
No. of Pins3Pins
DC Current Gain hFE Min70hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
Applications
Industrial, Wireless, Power Management
Spécifications techniques
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Power Dissipation Pd
280mW
Continuous Collector Current
25mA
Transistor Case Style
SOT-23
DC Current Gain hFE Min
70hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max
15V
Transition Frequency
2.5GHz
Power Dissipation
280mW
DC Collector Current
25mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
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Certificat de conformité du produit