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BSC120N03MSGATMA1
Power MOSFET, N Channel, 30 V, 39 A, 0.012 ohm, PG-TSDSON, Surface Mount
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FabricantINFINEON
Réf. FabricantBSC120N03MSGATMA1
Code Commande60R2514
Egalement appeléBSC120N03MS G, SP000311516
Fiche technique
17 053 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 0,932 $ |
| 10+ | 0,725 $ |
| 100+ | 0,541 $ |
| 500+ | 0,424 $ |
| 1000+ | 0,328 $ |
| 2500+ | 0,299 $ |
| 10000+ | 0,278 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
0,93 $
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Informations produit
FabricantINFINEON
Réf. FabricantBSC120N03MSGATMA1
Code Commande60R2514
Egalement appeléBSC120N03MS G, SP000311516
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id39A
Drain Source On State Resistance0.012ohm
On Resistance Rds(on)0.01ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Power Dissipation Pd28W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation28W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Aperçu du produit
The BSC120N03MS G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Fast switching MOSFET for SMPS
- Optimized for 5V driver application
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- Excellent gate charge x RDS (ON) product (FOM)
- Qualified according to JEDEC for target applications
- Superior thermal resistance
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
39A
On Resistance Rds(on)
0.01ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.012ohm
Transistor Case Style
PG-TDSON
Power Dissipation Pd
28W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
Traçabilité des produits