CY15B104Q-PZXI

CY15B104Q-PZXI is a low-power, 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15X104Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. These capabilities make the ideal for nonvolatile memory applications, requiring frequent or rapid writes.

• 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8
• 151-year data retention, NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI), supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Hardware protection using the Write Protect (active low WP) pin
• Software protection using Write Disable (WRDI) instruction
• Software block protection for 1/4, 1/2, or entire array
• Device ID contains manufacturer ID and product ID, unique ID, serial Number
• Dedicated special sector write and read
• Low-voltage operation range from 1.8V to 3.6V, 40MHz frequency
• 8-pin PDIP package, industrial temperature range from -40°C to +85°C