CY62157ESL-45ZSXI

CY62157ESL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active-low CE HIGH or both active-low BHE and active-low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), both the byte high enable and the byte low enable are disabled (active-low BHE, active-low BLE HIGH), or during an active write operation (active-low CE LOW and active-low WE LOW). This device is suitable for interfacing with processors that have TTL I/P levels.

• Very high speed is 45ns
• Maximum standby current is 8µA
• Typical active current is 1.8mA at f=1MHz
• Easy memory expansion with active-low CE and active-low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Vcc range from 2.2V to 3.6V and 4.5V to 5.5V
• 1.5V VCC for data retention
• 44-pin TSOP Type II package
• Industrial ambient temperature range from -40°C to +85°C