CY62167ELL-45ZXI

CY62167ELL-45ZXI is a high-performance CMOS static RAM organized as 1M words by 16 bits/2M words by 8 bits. This device features an advanced circuit design to provide an ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. This device also has an automatic power down feature that reduces power consumption when addresses are not toggling. To write to the device, take chip enables (active-low CE1 LOW and CE2 HIGH) and write enable (active-low WE) input LOW. If byte low enable (active-low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (active-low BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

• Wide voltage range from 4.5V to 5.5V
• Easy memory expansion with active-low CE1, CE2, and active-low OE features
• Automatic power-down when deselected, CMOS for optimum speed and power
• MoBL SRAM family, 16-Mbit density, 16 bus width, 90nm process technology
• 45ns speed, 10pF maximum input capacitance at (TA = 25°C)
• Input leakage current is +1µA maximum at (GND < VI < VCC)
• Output leakage current is +1µA maximum at (GND < VO < VCC, output disabled)
• VCC operating supply current is 25mA typical at (f = fMAX = 1/tRC)
• 1.5µA automatic power down current CMOS inputs at (active-low CE1 > VCC – 0.2V or CE2 < 0.2V)
• Industrial ambient temperature range from -40°C to +85°C, 48-pin TSOP package