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Quantité | Prix |
---|---|
1+ | 2,210 $ |
10+ | 1,980 $ |
25+ | 1,910 $ |
50+ | 1,890 $ |
100+ | 1,880 $ |
250+ | 1,850 $ |
500+ | 1,810 $ |
Informations produit
Aperçu du produit
The FM24CL04B-G is a 4Kbit (512 × 8bit) I2C FRAM (Ferroelectric Random Access Memory) device in 8 pin SOIC package. This non volatile memory reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating complexities, overhead and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, the FM24CL04B performs write operations at bus speed. No write delays are incurred. Data is written to memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without need for data polling. In addition, the device offers substantial write endurance compared with other non volatile memories. The FM24CL04B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement.
- High endurance 100 trillion (10^14) read/writes
- Automotive grade AEC-Q100 qualified
- Advanced high reliability ferroelectric process
- Up to 1MHz frequency
- Supports legacy timings for 100KHz and 400KHz
- Low power consumption
- Active current of 100μA at 100KHz
- Typical standby current of 3μA
- Operating voltage range from 2.7V to 3.65V
- Operating temperature range from -40°C to 85°C
Spécifications techniques
FRAM
4Kbit
512 x 8bit
I2C
-
3.65V
SOIC
Surface Mount
85°C
MSL 3 - 168 hours
4Kbit
512 x 8bit
Serial I2C (2-Wire)
1MHz
2.7V
SOIC
8Pins
-40°C
-
No SVHC (21-Jan-2025)
Documents techniques (3)
Produits de remplacement pour FM24CL04B-G
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit