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IGOT60R070D1AUMA3
Gallium Nitride (GaN) Transistor, 600 V, 31 A, 70 mohm, 5.8 nC, SOIC, Surface Mount
Modèle arrêté
Informations produit
FabricantINFINEON
Réf. FabricantIGOT60R070D1AUMA3Copie
Code Commande58AJ2275
Gamme de produitCoolGaN
Drain Source Voltage Vds600V
Continuous Drain Current Id31A
On Resistance Rds(on) Max0.07ohm
Drain Source On State Resistance70mohm
Typical Gate Charge5.8nC
Transistor Case StyleSOIC
Transistor MountingSurface Mount
No. of Pins20Pins
Product RangeCoolGaN
Qualification-
SVHCTo Be Advised
Spécifications techniques
Drain Source Voltage Vds
600V
On Resistance Rds(on) Max
0.07ohm
Typical Gate Charge
5.8nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN
SVHC
To Be Advised
Continuous Drain Current Id
31A
Drain Source On State Resistance
70mohm
Transistor Case Style
SOIC
No. of Pins
20Pins
Qualification
-
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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