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IGW25N120H3FKSA1
IGBT, 50 A, 2.05 V, 326 W, 1.2 kV, TO-247, 3 Pins
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FabricantINFINEON
Réf. FabricantIGW25N120H3FKSA1
Code Commande50Y1985
Egalement appeléIGW25N120H3, SP000674424
Fiche technique
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| Quantité | Prix |
|---|---|
| 1+ | 9,040 $ |
| 10+ | 7,840 $ |
| 25+ | 6,640 $ |
| 50+ | 5,450 $ |
| 100+ | 5,040 $ |
| 480+ | 4,650 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
9,04 $
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Informations produit
FabricantINFINEON
Réf. FabricantIGW25N120H3FKSA1
Code Commande50Y1985
Egalement appeléIGW25N120H3, SP000674424
Fiche technique
DC Collector Current50A
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.05V
Collector Emitter Saturation Voltage Vce(on)2.05V
Power Dissipation Pd326W
Power Dissipation326W
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Aperçu du produit
The IGW25N120H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Spécifications techniques
DC Collector Current
50A
Collector Emitter Saturation Voltage
2.05V
Power Dissipation Pd
326W
Collector Emitter Voltage Max
1.2kV
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.05V
Power Dissipation
326W
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
MSL 1 - Unlimited
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit