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IKW50N60H3FKSA1
IGBT, 100 A, 1.85 V, 333 W, 600 V, TO-247, 3 Pins
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantINFINEON
Réf. FabricantIKW50N60H3FKSA1
Code Commande50Y1991
Egalement appeléIKW50N60H3, SP000852244
Fiche technique
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| Quantité | Prix |
|---|---|
| 1+ | 9,970 $ |
| 10+ | 9,760 $ |
| 25+ | 6,520 $ |
| 50+ | 6,130 $ |
| 100+ | 5,740 $ |
| 480+ | 5,730 $ |
| 720+ | 5,040 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
9,97 $
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Informations produit
FabricantINFINEON
Réf. FabricantIKW50N60H3FKSA1
Code Commande50Y1991
Egalement appeléIKW50N60H3, SP000852244
Fiche technique
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage Vce(on)1.85V
Collector Emitter Saturation Voltage1.85V
Power Dissipation333W
Power Dissipation Pd333W
Collector Emitter Voltage V(br)ceo600V
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Aperçu du produit
The IKW50N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Spécifications techniques
DC Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.85V
Power Dissipation
333W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Continuous Collector Current
100A
Collector Emitter Saturation Voltage
1.85V
Power Dissipation Pd
333W
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit