IPB60R060P7ATMA1

IPB60R060P7ATMA1 is a 600V CoolMOS™ P7 power transistor. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

• Suitable for hard and soft switching (PFC and LLC)due to an outstanding commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness greater than 2KV(HBM) for all products
• Fully qualified acc. JEDEC for industrial applications
• Simplified thermal management due to low switching and conduction losses
• Suitable for a wide variety of applications and power ranges
• Drain-source breakdown voltage is 600V min at (VGS = 0V, ID = 1mA)
• Gate charge total is 67nC typical at (VDD = 400V, ID = 15.9A, VGS = 0 to 10V)
• Operating junction temperature range from -55°C to 150°C
• Diode commutation speed is 900A/µs max at (VDS = 0 to 400V, ISD< = 48A, Tj=25°C)