IPP110N20N3GXKSA1
Power MOSFET, N Channel, 200 V, 88 A, 11 mohm, TO-220, Through Hole
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| Quantité | Prix |
|---|---|
| 1+ | 4,570 $ |
| 10+ | 4,270 $ |
| 25+ | 4,220 $ |
| 50+ | 4,150 $ |
| 100+ | 4,090 $ |
| 250+ | 3,950 $ |
| 500+ | 3,800 $ |
Informations produit
Aperçu du produit
The IPP110N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Environmentally-friendly
- Easy to design in
Applications
Power Management, Motor Drive & Control, Lighting, Industrial, Audio, LED Lighting
Spécifications techniques
N Channel
200V
0.0099ohm
TO-220
10V
3V
3Pins
-
-
N Channel
88A
11mohm
Through Hole
300W
300W
175°C
-
No SVHC (21-Jan-2025)
Documents techniques (3)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit