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IPP80P03P4L04AKSA2
Power MOSFET, P Channel, 30 V, 80 A, 0.0044 ohm, TO-220, Through Hole
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FabricantINFINEON
Réf. FabricantIPP80P03P4L04AKSA2
Code Commande51AH5918
Gamme de produitOptiMOS-P2 Series
Fiche technique
Modèle arrêté
Informations produit
FabricantINFINEON
Réf. FabricantIPP80P03P4L04AKSA2
Code Commande51AH5918
Gamme de produitOptiMOS-P2 Series
Fiche technique
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0044ohm
On Resistance Rds(on)0.0037ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd137W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation137W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS-P2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Aperçu du produit
- P-channel - Logic Level - Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS compliant)
- 100% Avalanche tested
- Intended for reverse battery protection
Spécifications techniques
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0044ohm
Transistor Case Style
TO-220
Power Dissipation Pd
137W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
OptiMOS-P2 Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
P Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0037ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
137W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit