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IPTG111N20NM3FDATMA1
Power MOSFET, N Channel, 200 V, 108 A, 0.009 ohm, HSOG, Surface Mount
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FabricantINFINEON
Réf. FabricantIPTG111N20NM3FDATMA1
Code Commande60AJ3896
Gamme de produitOptiMOS 3 Series
Fiche technique
Modèle arrêté
Informations produit
FabricantINFINEON
Réf. FabricantIPTG111N20NM3FDATMA1
Code Commande60AJ3896
Gamme de produitOptiMOS 3 Series
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id108A
Drain Source On State Resistance0.009ohm
On Resistance Rds(on)0.009ohm
Transistor Case StyleHSOG
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd375W
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.009ohm
Transistor Case Style
HSOG
Rds(on) Test Voltage
10V
Power Dissipation Pd
375W
No. of Pins
8Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
108A
On Resistance Rds(on)
0.009ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
To Be Advised
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit