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IPW60R041C6FKSA1

Name: INFINEON IPW60R041C6FKSA1
Brand: INFINEON
SKU: 30T1850
Availability: InStock

Power MOSFET, N Channel, 650 V, 77.5 A, 0.041 ohm, TO-247, Through Hole

Date/Lot Code

L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.

FabricantINFINEON

Réf. FabricantIPW60R041C6FKSA1

Code Commande30T1850

Egalement appeléIPW60R041C6, SP000718886

Fiche technique

Data Sheet

Découvrez tous les documents techniques

296 En Stock

Quantité	Prix
1+	16,560 $
10+	14,530 $
25+	13,880 $
50+	13,220 $
100+	12,570 $
480+	12,170 $

Prix pour :Each

Minimum: 1

Multiple: 1

16,56 $

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Note

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Informations produit

FabricantINFINEON

Réf. FabricantIPW60R041C6FKSA1

Code Commande30T1850

Egalement appeléIPW60R041C6, SP000718886

Fiche technique

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds650V

Continuous Drain Current Id77.5A

On Resistance Rds(on)0.037ohm

Drain Source On State Resistance0.041ohm

Transistor Case StyleTO-247

Transistor MountingThrough Hole

Rds(on) Test Voltage10V

Power Dissipation Pd481W

Gate Source Threshold Voltage Max3V

Power Dissipation481W

No. of Pins3Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSL-

SVHCNo SVHC (21-Jan-2025)

Aperçu du produit

The IPW60R041C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.

Easy to control of switching behaviour
Very high commutation ruggedness
Better light load efficiency compared to C3
Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
Improved power density
Improved reliability
Improved efficiency in hard switching applications
Reduces possible ringing due to PCB layout

Applications

Consumer Electronics, Power Management, Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Lighting

Spécifications techniques

Channel Type

N Channel

Continuous Drain Current Id

77.5A

Drain Source On State Resistance

0.041ohm

Transistor Mounting

Through Hole

Power Dissipation Pd

481W

Power Dissipation

481W

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (21-Jan-2025)

Drain Source Voltage Vds

650V

On Resistance Rds(on)

0.037ohm

Transistor Case Style

TO-247

Rds(on) Test Voltage

10V

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Product Range

MSL

Documents techniques (1)

Technical Data Sheet EN

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Législation et Questions environnementales

US ECCN:EAR99

EU ECCN:Unknown

Conforme RoHS :Oui

RoHS

Conforme à la norme RoHS Phthalates:Oui