IR2101STRPBF
MOSFET Driver High Side and Low Side, 10V-20V supply, 360mA peak out, SOIC-8
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 1,920 $ | 1,92 $ |
| Total Prix | 1,92 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 1,920 $ |
| 50+ | 1,270 $ |
| 100+ | 1,090 $ |
| 250+ | 1,060 $ |
| 500+ | 1,020 $ |
| 1000+ | 0,984 $ |
| 2500+ | 0,946 $ |
| 5000+ | 0,924 $ |
Informations produit
Aperçu du produit
The IR2101STRPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Industrial, Consumer Electronics, Alternative Energy, Power Management
Spécifications techniques
2Channels
High Side and Low Side
SOIC
SOIC
Non-Inverting
360mA
20V
125°C
150ns
-
No SVHC (25-Jun-2025)
-
IGBT, MOSFET
8Pins
Surface Mount
210mA
10V
-40°C
160ns
-
MSL 2 - 1 year
Documents techniques (1)
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit