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IRFB7430PBF
Power MOSFET, N Channel, 40 V, 195 A, 0.0013 ohm, TO-220AB, Through Hole
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 14 semaine(s)
| Quantité | Prix |
|---|---|
| 1+ | 7,580 $ |
| 10+ | 6,900 $ |
| 25+ | 6,550 $ |
| 50+ | 6,190 $ |
| 100+ | 5,840 $ |
| 250+ | 5,470 $ |
| 500+ | 5,110 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
7,58 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantINFINEON
Réf. FabricantIRFB7430PBF
Code Commande53W9267
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id195A
On Resistance Rds(on)0.001ohm
Drain Source On State Resistance0.0013ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation375W
Power Dissipation Pd375W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- High-current rating and high-current carrying capability package
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Standard pinout allows for drop in replacement
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.001ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
375W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
195A
Drain Source On State Resistance
0.0013ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Documents techniques (4)
Produits de remplacement pour IRFB7430PBF
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Produits associés
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit