IRFR120NTRPBF.
Power MOSFET, N Channel, 100 V, 9.4 A, 0.21 ohm, TO-252AA, Surface Mount
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| Quantité | Prix |
|---|---|
| 1+ | 0,616 $ |
Informations produit
Aperçu du produit
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Spécifications techniques
N Channel
100V
0.21ohm
Surface Mount
10V
TO-252AA
3Pins
-
MSL 1 - Unlimited
N Channel
9.4A
0.21ohm
48W
4V
48W
175°C
-
No SVHC (23-Jan-2024)
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit