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Quantité | Prix |
---|---|
1+ | 7,860 $ |
10+ | 7,330 $ |
25+ | 7,090 $ |
50+ | 6,940 $ |
100+ | 6,770 $ |
250+ | 6,550 $ |
500+ | 6,450 $ |
Informations produit
Aperçu du produit
S25FL512SAGMFI013 is a FL-S flash non-volatile memory. It uses MirrorBit™ technology - that stores two data bits in each memory array transistor and eclipse architecture - that dramatically improves program and erase performance. This device connects to a host system via an SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.
- 512Mb density, 65nm mirrorbit process technology, 133MHz speed
- CMOS 3.0V core with versatile I/O, SPI with multi-I/O
- SPI clock polarity and phase modes 0 and 3
- Multi I/O command set and footprint compatible with the S25FL-P SPI family
- Normal, fast, dual, quad, fast DDR, dual DDR, quad DDR READ commands
- Common Flash Interface (CFI) data for configuration information
- Quad-input page programming (QPP) for slow clock systems
- 100000 minimum program-erase cycling endurance
- Status register bits to control protection against program or erase of a contiguous range of sectors
- 16-pin SO package, industrial temperature range from -40°C to + 85°C
Spécifications techniques
Serial NOR
512Mbit
64M x 8bit
SPI
SOIC
133MHz
-
3.6V
Surface Mount
85°C
MSL 3 - 168 hours
512Mbit
64M x 8bit
SPI
SOIC
16Pins
133MHz
2.7V
3V
-40°C
3V Serial NOR Flash Memories
No SVHC (21-Jan-2025)
Documents techniques (1)
Produits de remplacement pour S25FL512SAGMFI013
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Législation et Questions environnementales
RoHS
RoHS
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