Vous en voulez davantage ?
Quantité | Prix |
---|---|
1+ | 12,930 $ |
10+ | 12,930 $ |
25+ | 12,930 $ |
50+ | 12,930 $ |
100+ | 12,930 $ |
250+ | 12,930 $ |
Informations produit
Aperçu du produit
S29GL01GT10TFI020 is a MIRRORBIT™ flash product fabricated on 45nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 100ns random access time, single supply (VCC) for read/program/erase (2.7V to 3.6V)
- 45-nm MIRRORBIT™ technology, wide I/O voltage range (VIO) from 1.65V to VCC
- ×8/×16 data bus, asynchronous 32-byte page read
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Volatile and non-volatile protection methods for each sector
- Separate 2048-byte one-time program (OTP) array
- 100,000 program/erase cycles, 20-year data retention
- Industrial temperature range from -40°C to +85°C, 56-pin TSOP package
Spécifications techniques
Parallel NOR
1Gbit
128M x 8bit
CFI, Parallel
TSOP
-
100ns
3.6V
Surface Mount
85°C
MSL 3 - 168 hours
1Gbit
128M x 8bit
CFI, Parallel
TSOP
56Pins
-
2.7V
-
-40°C
3V Parallel NOR Flash Memories
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit