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Quantité | Prix |
---|---|
1+ | 6,370 $ |
10+ | 5,990 $ |
25+ | 5,680 $ |
50+ | 5,430 $ |
100+ | 5,200 $ |
250+ | 4,940 $ |
Informations produit
Aperçu du produit
S29GL128S10DHIV10 is a MIRRORBIT™ Eclipse flash product fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 100ns random access time
- CMOS 3.0V core with versatile I/O, 65nm MIRRORBIT™ Eclipse technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- ×16 data bus, asynchronous 32-byte page read
- Programming in page multiples, up to a maximum of 512 bytes
- Automatic error checking and correction – internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- Volatile and non-volatile protection methods for each sector
- Fortified ball-grid array package (LAE064), industrial temperature range from -40°C to +85°C
Spécifications techniques
Parallel NOR
8M x 16bit
FBGA
-
2.7V
3V
-40°C
3V Parallel NOR Flash Memories
128Mbit
Parallel
64Pins
100ns
3.6V
Surface Mount
85°C
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit