Vous en voulez davantage ?
Quantité | Prix |
---|---|
1+ | 5,940 $ |
10+ | 5,430 $ |
25+ | 5,160 $ |
50+ | 5,090 $ |
100+ | 5,020 $ |
250+ | 4,730 $ |
500+ | 4,630 $ |
Informations produit
Aperçu du produit
S29JL032J70BHI310 is a S29JL032J 32Mb (4M × 8Bit/2M × 16Bit), 3V, simultaneous read/write flash memory. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency between read and write operations, multiple bank architecture
- Any combination of sectors can be erased, manufactured on 0.11µm process technology
- Zero power operation, compatible with JEDEC standards
- Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
- Pinout and software compatible with single-power-supply flash standard
- High performance, access time as fast as 60ns, ultra low power consumption
- Supports common flash memory interface (CFI), erase suspend/erase resume
- 70ns speed, fine-pitch ball grid array package
- Industrial (–40°C to +85°C) temperature range, top boot device, 2 banks: 8/24Mb
Spécifications techniques
Parallel NOR
32Mbit
2M x 16bit / 4M x 8bit
Parallel
FBGA
-
70ns
3.6V
Surface Mount
85°C
No SVHC (21-Jan-2025)
32Mbit
2M x 16bit / 4M x 8bit
Parallel
FBGA
48Pins
-
2.7V
-
-40°C
3V Parallel NOR Flash Memories
Documents techniques (2)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit