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DE275-501N16A
RF FET Transistor, 500 V, 16 A, 590 W, 100 MHz, DE-275
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Modèle arrêté
Informations produit
FabricantIXYS RF
Réf. FabricantDE275-501N16A
Code Commande42M1754
Fiche technique
Drain Source Voltage Vds500V
Continuous Drain Current Id16A
Power Dissipation590W
Operating Frequency Min-
Power Dissipation Pd590W
Operating Frequency Max100MHz
Transistor Case StyleDE-275
RF Transistor CaseDE-275
No. of Pins6Pins
Operating Temperature Max175°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Aperçu du produit
The DE275-501N16A is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.
- High isolation voltage
- Excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced low Qg process
- Low gate charge and capacitances offer easier to drive and faster switching
- Very low insertion inductance
- No beryllium oxide (BeO) or other hazardous materials
- Easy to mount, no insulators needed
- High power density
Applications
Power Management, Industrial
Spécifications techniques
Drain Source Voltage Vds
500V
Power Dissipation
590W
Power Dissipation Pd
590W
Transistor Case Style
DE-275
No. of Pins
6Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
16A
Operating Frequency Min
-
Operating Frequency Max
100MHz
RF Transistor Case
DE-275
Operating Temperature Max
175°C
Transistor Mounting
Surface Mount
MSL
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (12-Jan-2017)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit