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IXFN130N30
Bipolar (BJT) Single Transistor, N Channel, 130 A, 300 V, 0.022 ohm, 10 V, 4 V
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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN130N30Copie
Code Commande38K3181
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id130A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-227B
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation700W
Power Dissipation Pd700W
Operating Temperature Max150°C
No. of Pins4Pins
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Aperçu du produit
The IXFN130N30 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
130A
Drain Source On State Resistance
0.022ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
700W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.022ohm
Transistor Case Style
SOT-227B
Transistor Mounting
Module
Power Dissipation Pd
700W
No. of Pins
4Pins
Product Range
-
SVHC
To Be Advised
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit