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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN130N30
Code Commande38K3181
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id130A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Transistor Case StyleSOT-227B
Transistor MountingModule
Rds(on) Test Voltage10V
Power Dissipation Pd700W
Gate Source Threshold Voltage Max4V
Power Dissipation700W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (12-Jan-2017)
Aperçu du produit
The IXFN130N30 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.022ohm
Transistor Case Style
SOT-227B
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
130A
On Resistance Rds(on)
0.022ohm
Transistor Mounting
Module
Power Dissipation Pd
700W
Power Dissipation
700W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (12-Jan-2017)
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (12-Jan-2017)
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Certificat de conformité du produit