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IXFN170N10
Bipolar (BJT) Single Transistor, N Channel, 170 A, 100 V, 0.01 ohm, 10 V, 4 V
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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN170N10Copie
Code Commande97K2550
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170A
On Resistance Rds(on)0.01ohm
Drain Source On State Resistance0.01ohm
Transistor Case StyleISOTOP
Transistor MountingModule
Power Dissipation Pd600W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation600W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (12-Jan-2017)
Aperçu du produit
The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
- UL94V-0 Flammability rating
Applications
Power Management, Lighting
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
170A
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Module
Rds(on) Test Voltage
10V
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (12-Jan-2017)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.01ohm
Transistor Case Style
ISOTOP
Power Dissipation Pd
600W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Documents techniques (1)
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (12-Jan-2017)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit