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IXFN170N10
Bipolar (BJT) Single Transistor, N Channel, 170 A, 100 V, 0.01 ohm, 10 V, 4 V
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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN170N10Copie
Code Commande97K2550
Channel TypeN Channel
Continuous Drain Current Id170A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.01ohm
On Resistance Rds(on)0.01ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation600W
Power Dissipation Pd600W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Aperçu du produit
The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
- UL94V-0 Flammability rating
Applications
Power Management, Lighting
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.01ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
600W
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Continuous Drain Current Id
170A
Drain Source On State Resistance
0.01ohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4V
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit