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IXFN180N10
Bipolar (BJT) Single Transistor, HiPerFET, N Channel, 180 A, 100 V, 0.008 ohm, 10 V, 4 V
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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN180N10
Code Commande14J1681
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds100V
Drain Source On State Resistance8000µohm
On Resistance Rds(on)0.008ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-227B
Transistor MountingModule
Gate Source Threshold Voltage Max4V
Power Dissipation600W
Power Dissipation Pd600W
Operating Temperature Max150°C
No. of Pins4Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Aperçu du produit
The IXFN180N10 is a 100V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- miniBLOC with aluminium nitride isolation
- Low drain-to-tab capacitance
- Low inductance
- Avalanche rated
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Spécifications techniques
Transistor Polarity
N Channel
Continuous Drain Current Id
180A
Drain Source On State Resistance
8000µohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.008ohm
Transistor Case Style
SOT-227B
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
600W
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2020)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit