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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN200N07
Code Commande14J1683
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds70V
Drain Source On State Resistance6000µohm
On Resistance Rds(on)0.006ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-227B
Transistor MountingModule
Gate Source Threshold Voltage Max4V
Power Dissipation250W
Power Dissipation Pd250W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Aperçu du produit
The IXFN200N07 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Spécifications techniques
Transistor Polarity
N Channel
Continuous Drain Current Id
200A
Drain Source On State Resistance
6000µohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Channel Type
N Channel
Drain Source Voltage Vds
70V
On Resistance Rds(on)
0.006ohm
Transistor Case Style
SOT-227B
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
250W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (12-Jan-2017)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit