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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN200N07Copy
Newark Part No.14J1683
Your Part Number
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN200N07Copy
Newark Part No.14J1683
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds70V
On Resistance Rds(on)0.006ohm
Drain Source On State Resistance6000µohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-227B
Transistor MountingModule
Gate Source Threshold Voltage Max4V
Power Dissipation Pd250W
Power Dissipation250W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXFN200N07 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
200A
On Resistance Rds(on)
0.006ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
250W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Channel Type
N Channel
Drain Source Voltage Vds
70V
Drain Source On State Resistance
6000µohm
Transistor Case Style
SOT-227B
Gate Source Threshold Voltage Max
4V
Power Dissipation
250W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate