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IXFN32N120
Bipolar (BJT) Single Transistor, N Channel, 32 A, 1.2 kV, 0.35 ohm, 10 V, 5 V
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN32N120Copy
Newark Part No.38K3182
Your Part Number
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN32N120Copy
Newark Part No.38K3182
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id32A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.35ohm
On Resistance Rds(on)0.35ohm
Rds(on) Test Voltage10V
Transistor Case StyleISOTOP
Gate Source Threshold Voltage Max5V
Transistor MountingModule
Power Dissipation780W
Power Dissipation Pd780W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
The IXFN32N120 is a 1200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
32A
Drain Source On State Resistance
0.35ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
Power Dissipation
780W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.35ohm
Transistor Case Style
ISOTOP
Transistor Mounting
Module
Power Dissipation Pd
780W
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate