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IXFN60N60
Bipolar (BJT) Single Transistor, N Channel, 60 A, 600 V, 0.075 ohm, 10 V, 4.5 V
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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN60N60
Code Commande14J1693
Fiche technique
Channel TypeN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.075ohm
On Resistance Rds(on)0.075ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Transistor MountingModule
Power Dissipation600W
Power Dissipation Pd600W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Aperçu du produit
The IXFN60N60 is a HiPerFET™ N-channel enhancement-mode Single Die MOSFET features avalanche rated and fast intrinsic rectifier.
- International standard package
- miniBLOC with aluminium nitride isolation
- Low RDS (ON) HDMOS™ process
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
- High dV/dt and low trr
Applications
Power Management, Industrial, Motor Drive & Control, Lighting, Thermal Management
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.075ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
600W
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.075ohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit