IXTN200N10L2

IXTN200N10L2 is a LinearL2™ power MOSFET with an extended Forward Bias Safe Operating Area (FBSOA), specifically designed for applications requiring operation in the current saturation region. Unlike conventional switch-mode operation, linear-mode operation subjects MOSFETs to significantly higher thermal and electrical stress due to the simultaneous presence of high drain voltages and currents, often leading to failure. This Littelfuse device addresses these challenges with a unique design featuring low thermal resistance, high power density, and extended FBSOA. By suppressing electrothermal instability, it enables wider and more reliable operating windows. The extended FBSOA is guaranteed at 75°C, making it ideal for demanding linear-mode applications such as e-fuses, hot-swap circuits, battery management, current regulators, linear amplifiers, fan controllers, programmable loads, and soft-start control.

• Single N-channel configuration
• 100V drain-source voltage (VDSS)
• 0.011ohm maximum on-resistance (RDS(ON)) at 25°C
• 178A continuous drain current (ID) at 25°C
• 540nC gate charge, 0.15K/W thermal resistance, junction-to-case (RthJC)
• 830W power dissipation, 245ns reverse recovery time
• Avalanche rated
• SOT-227B (mini) package