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MG06400D-BN4MM
IGBT Module, Dual [Half Bridge], 500 A, 1.45 V, 1.25 kW, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 11 semaine(s)
Informations produit
FabricantLITTELFUSE
Réf. FabricantMG06400D-BN4MM
Code Commande20X9125
Fiche technique
Transistor PolarityDual NPN
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current500A
DC Collector Current500A
Collector Emitter Saturation Voltage Vce(on)1.45V
Collector Emitter Saturation Voltage1.45V
Power Dissipation1.25kW
Power Dissipation Pd1.25kW
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Dual NPN
Continuous Collector Current
500A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation
1.25kW
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
500A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation Pd
1.25kW
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
No. of Pins
7Pins
IGBT Technology
-
Product Range
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit