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MG12100S-BN2MM
IGBT Module, Dual [Half Bridge], 140 A, 1.7 V, 450 W, 125 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 11 semaine(s)
Informations produit
FabricantLITTELFUSE
Réf. FabricantMG12100S-BN2MM
Code Commande31Y2581
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual NPN
Continuous Collector Current140A
DC Collector Current140A
Collector Emitter Saturation Voltage1.7V
Collector Emitter Saturation Voltage Vce(on)1.7V
Power Dissipation Pd450W
Power Dissipation450W
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max125°C
Operating Temperature Max125°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
140A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
450W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
125°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual NPN
DC Collector Current
140A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
450W
Junction Temperature, Tj Max
125°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Documents techniques (2)
Produits de remplacement pour MG12100S-BN2MM
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit