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Quantité | Prix |
---|---|
1+ | 3,740 $ |
10+ | 3,490 $ |
25+ | 3,400 $ |
50+ | 3,310 $ |
100+ | 3,230 $ |
250+ | 3,130 $ |
500+ | 2,980 $ |
Informations produit
Aperçu du produit
MT29F2G08ABAEAWP:E is a NAND flash memory. This NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash dies. A NAND flash die is the minimum unit that can independently execute commands and report status. This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
- Open NAND flash interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Command set: ONFI NAND flash protocol
- Operation status byte provides software method for detecting: operation completion
- Pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand-Init) after power up (contact factory)
- 3.3V (2.7 to 3.6V) operating voltage range
- 48-pin TSOP package, 0°C to +70°C commercial operating temperature range
Spécifications techniques
SLC NAND
2Gbit
256M x 8bit
Parallel
TSOP-I
50MHz
16ns
3.6V
Surface Mount
70°C
MSL 3 - 168 hours
2Gbit
256M x 8bit
Parallel
TSOP-I
48Pins
50MHz
2.7V
3.3V
0°C
3.3V Parallel NAND Flash Memories
No SVHC (17-Jan-2023)
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit