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Quantité | Prix |
---|---|
1+ | 7,540 $ |
10+ | 7,020 $ |
25+ | 6,800 $ |
50+ | 6,650 $ |
100+ | 6,500 $ |
250+ | 6,270 $ |
500+ | 6,120 $ |
Informations produit
Aperçu du produit
MT47H32M16NF-25E AAT:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM onsists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. It has JEDEC-standard of 1.8V I/O (SSTL_18-compatible) and differential data strobe (DQS, DQS#) option.
- Operating voltage range is 1.8V (VDD CMOS)
- 32Meg x 16 configuration, automotive qualified, 8D response time
- Packaging style is 84-ball 8mm x 12.5mm FBGA
- Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
- Operating temperature range is –40°C to +105°C, design generation
- Data rate is 800MT/s, 4n-bit prefetch architecture
- DLL to align DQ and DQS transitions with CK, programmable CAS latency (CL)
- Posted CAS additive latency (AL), WRITE latency = READ latency - 1ᵗCK
- Adjustable data-output drive strength, 64ms, 8192-cycle refresh
- On-die termination (ODT), supports JEDEC clock jitter specification
Spécifications techniques
DDR2
512Mbit
32M x 16bit
400MHz
TFBGA
1.8V
2.5ns
105°C
No SVHC (17-Jan-2023)
512Mbit
32M x 16bit
400MHz
TFBGA
84Pins
Surface Mount
-40°C
-
Documents techniques (2)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit