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MT53E1G32D2FW-046 AUT:B
DRAM, Mobile LPDDR4, 32 Gbit, 1G x 32bit, 2.133 GHz, TFBGA, 200 Pins
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FabricantMICRON
Réf. FabricantMT53E1G32D2FW-046 AUT:BCopie
Délai d’approvisionnement standard du fabricant51 semaines
Code Commande25AK7955
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| Quantité | Prix |
|---|---|
| 1+ | 922,040 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
922,04 $
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Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantMICRON
Réf. FabricantMT53E1G32D2FW-046 AUT:BCopie
Délai d’approvisionnement standard du fabricant51 semaines
Code Commande25AK7955
DRAM TypeMobile LPDDR4
DRAM Density32Gbit
Memory Density32Gbit
Memory Configuration1G x 32bit
DRAM Memory Configuration1G x 32bit
Clock Frequency2.133GHz
Clock Frequency Max2.133GHz
IC Case / PackageTFBGA
Memory Case StyleTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
Access Time468ps
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max125°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Aperçu du produit
MT53E1G32D2FW-046 AUT:B is a LPDDR4 SDRAM. It is a 16Gb high-speed, CMOS dynamic random-access memory device. This memory is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks. It has on-chip temperature sensor to control self refresh rate and programmable READ and WRITE latencies (RL/WL). This memory has directed per-bank refresh for concurrent bank operation and ease of command scheduling. It has single-data-rate CMD/ADR entry with programmable VSS (ODT) termination.
- Operating voltage range is 1.10V (VDD2) / 0.60V or 1.10V (VDDQ)
- 1Gig x 32 configuration, LPDDR4, 2die addressing, clock-stop capability
- Packaging style is 200-ball TFBGA
- Cycle time is 046 = 468ps, ᵗCK RL = 36/40
- Operating temperature range is –40°C to +125°C, automotive certified, b design
- Clock rate is 2133MHz, data rate is 4266Mb/s, 16n prefetch DDR architecture
- Frequency range is 2133–10 MHz (data rate range per pin: 4266–20Mb/s)
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Partial-array self refresh (PASR), selectable output drive strength (DS)
Spécifications techniques
DRAM Type
Mobile LPDDR4
Memory Density
32Gbit
DRAM Memory Configuration
1G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
TFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
125°C
SVHC
No SVHC (17-Jan-2023)
DRAM Density
32Gbit
Memory Configuration
1G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
TFBGA
No. of Pins
200Pins
Access Time
468ps
Operating Temperature Min
-40°C
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (17-Jan-2023)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit