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MT53E256M32D2DS-053 AUT:B
DRAM, Mobile LPDDR4, 8 Gbit, 256M x 32bit, 1.866 GHz, WFBGA, 200 Pins
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FabricantMICRON
Réf. FabricantMT53E256M32D2DS-053 AUT:BCopie
Délai d’approvisionnement standard du fabricant51 semaines
Code Commande80AH8367
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Délais d’approvisionnement standard du fabricant : 51 semaine(s)
| Quantité | Prix |
|---|---|
| 1+ | 422,700 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
422,70 $
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Informations produit
FabricantMICRON
Réf. FabricantMT53E256M32D2DS-053 AUT:BCopie
Délai d’approvisionnement standard du fabricant51 semaines
Code Commande80AH8367
DRAM TypeMobile LPDDR4
Memory Density8Gbit
DRAM Density8Gbit
Memory Configuration256M x 32bit
DRAM Memory Configuration256M x 32bit
Clock Frequency1.866GHz
Clock Frequency Max1.866GHz
Memory Case StyleWFBGA
IC Case / PackageWFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Access Time535ps
Operating Temperature Min-40°C
Operating Temperature Max125°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Aperçu du produit
MT53E256M32D2DS-053 AUT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16’s 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16 bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing
- Packaging style is 200-ball WFBGA
- Cycle time is 535ps at RL = 32/36, B design
- Operating temperature range is –40°C to +125°C, automotive qualified
- Clock rate is 1866MHz, data rate per pin is 3733Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Spécifications techniques
DRAM Type
Mobile LPDDR4
DRAM Density
8Gbit
DRAM Memory Configuration
256M x 32bit
Clock Frequency Max
1.866GHz
IC Case / Package
WFBGA
Supply Voltage Nom
1.1V
Access Time
535ps
Operating Temperature Max
125°C
SVHC
No SVHC (17-Jan-2023)
Memory Density
8Gbit
Memory Configuration
256M x 32bit
Clock Frequency
1.866GHz
Memory Case Style
WFBGA
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Min
-40°C
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (17-Jan-2023)
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Certificat de conformité du produit